D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 276

MCU 3V 0K I-TEMP 144-QFP

D12674RVFQ33D

Manufacturer Part Number
D12674RVFQ33D
Description
MCU 3V 0K I-TEMP 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheet

Specifications of D12674RVFQ33D

Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412674RVFQ33D
HD6412674RVFQ33D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12674RVFQ33DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
6.7.15
When burst mode is selected on the synchronous DRAM interface, the DACK and EDACK output
timing can be selected with the DDS and EDDS bits in DRAMCR. When continuous synchronous
DRAM space is accessed in DMAC/EXDMAC single address mode at the same time, these bits
select whether or not burst access is to be performed. The establishment time for the read data can
be extended in the clock suspend mode irrespective of the settings of the DDS and EDDS bits.
(1) Output Timing of DACK
When DDS = 1 or EDDS = 1: Burst access is performed by determining the address only,
irrespective of the bus master. With the synchronous DRAM interface, the DACK or EDACK
output goes low from the T
Figure 6.60 shows the DACK or EDACK output timing for the synchronous DRAM interface
when DDS = 1 or EDDS = 1.
Rev. 3.00 Mar 17, 2006 page 224 of 926
REJ09B0283-0300
Interface
DMAC and EXDMAC Single Address Transfer Mode and Synchronous DRAM
DACK
DACK or EDACK
DACK
c1
state.
EDACK
EDACK
EDACK

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