D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 960

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

Section 24 Electrical Characteristics
Notes: 1. Follow the program/erase algorithms when making the time settings.
24.7
The F-ZTAT and masked ROM versions both satisfy the electrical characteristics shown in this
manual, but actual electrical characteristic values, operating margins, noise margins, and other
properties may vary due to differences in manufacturing process, on-chip ROM, layout patterns,
and so on.
When system evaluation testing is carried out using the F-ZTAT version, the same evaluation
testing should also be conducted for the masked ROM version when changing over to that version.
Rev. 3.00 Mar 17, 2006 page 908 of 926
REJ09B0283-0300
2. Programming time per 128 bytes. (Indicates the total time during which the P bit is set
3. Time to erase one block. (Indicates the time during which the E bit is set in FLMCR1.
4. Maximum programming time
5. The maximum number of writes (N) should be set as shown below according to the
6. For the maximum erase time (t
7. Minimum number of times for which all characteristics are guaranteed after rewriting
8. Reference value for 25°C (as a guideline, rewriting should normally function up to this
9. Data retention characteristic when rewriting is performed within the specification range,
Usage Note
Number of writes (n)
(Additional programming)
Number of writes (n)
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
Does not include the erase-verify time.)
actual set value of (z) so as not to exceed the maximum programming time (t
The wait time after P bit setting (z) should be changed as follows according to the
number of writes (n).
wait time after E bit setting (z) and the maximum number of erases (N):
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
t
1
7
1
t
P
E
(max) = Wait time after E bit setting (z)
(max) =
n
n
n
6
1000
6
i=1
N
wait time after P bit setting (z)
z = 30 µs
z = 200 µs
z = 10 µs
E
(max)), the following relationship applies between the
maximum number of erases (N)
P
(max)).