D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 269

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

6.7.13
This LSI is provided with a synchronous DRAM refresh control function. Auto refreshing is used.
In addition, self-refreshing can be executed when the chip enters the software standby state.
Refresh control is enabled when any area is designated as continuous synchronous DRAM space
in accordance with the setting of bits RMTS2 to RMTS0 in DRAMCR.
Precharge-sel
DQMU, DQML
Address bus
Refresh Control
Data bus
CKE
CAS
RAS
WE
Figure 6.53 Example of Operation Timing in RAS Down Mode
PALL ACTV READ
Continuous synchronous
DRAM space read
address
Column
T
p
address
address
Row
Row
T
r
(BE = 1, CAS Latency 2)
T
c1
Column address
T
cl
T
c2
High
NOP
External
space read
External address
External address
Rev. 3.00 Mar 17, 2006 page 217 of 926
T
1
T
2
Section 6 Bus Controller (BSC)
READ
Continuous synchronous
DRAM space read
T
c1
Column address 2
T
cl
NOP
REJ09B0283-0300
T
c2