D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 837

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

19.5.4
EBR2 specifies the flash memory erase area block. EBR2 is initialized to H'00 when the SWE bit
in FLMCR1 is 0. Set only one bit in EBR2 and EBR1 together (do not set more than one bit at the
same time). Setting more than one bit will automatically clear all EBR1 and EBR2 bits to 0. For
details, see table 19.3, Erase Blocks.
Bit
7, 6
5
4
3
2
1
0
Bit Name
—
EB13
EB12
EB11
EB10
EB9
EB8
Erase Block Register 2 (EBR2)
Initial Value
All 0
0
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
Description
Reserved
The initial value should not be changed.
When this bit is set to 1, 64 kbytes of EB13 are to
be erased.
Note: In the H8S/2678 Group, this bit is reserved.
When this bit is set to 1, 64 kbytes of EB12 are to
be erased.
Note: In the H8S/2678 Group, this bit is reserved.
When this bit is set to 1, 64 kbytes of EB11 are to
be erased.
When this bit is set to 1, 64 kbytes of EB10 are to
be erased.
When this bit is set to 1, 64 kbytes of EB9 are to be
erased.
When this bit is set to 1, 32 kbytes of EB8 are to be
erased.
Section 19 Flash Memory (F-ZTAT Version)
The initial value should not be changed.
The initial value should not be changed.
Rev. 3.00 Mar 17, 2006 page 785 of 926
REJ09B0283-0300