HD64F3437STF16V Renesas Electronics America, HD64F3437STF16V Datasheet - Page 27

• Manufacturer Part Number: HD64F3437STF16V
• Description: MCU 3/5V 60K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3437STF16V

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.3 PROM Programming ......................................................................................................... 368
Section 19 ROM (32-kbyte Dual-Power-Supply Flash Memory Version)
19.1 Flash Memory Overview ................................................................................................... 375
19.2 Flash Memory Register Descriptions ................................................................................ 379
19.3 On-Board Programming Modes ........................................................................................ 385
19.4 Programming and Erasing Flash Memory......................................................................... 394
19.5 Flash Memory Emulation by RAM ................................................................................... 415
19.6 Flash Memory Writer Mode (H8/3434F) .......................................................................... 418
19.7 Flash Memory Programming and Erasing Precautions ..................................................... 428
Section 20 ROM (60-kbyte Dual-Power-Supply Flash Memory Version)
20.1 Flash Memory Overview ................................................................................................... 437
18.2.2 Socket Adapter Pin Assignments and Memory Map ........................................... 365
18.3.1 Programming and Verification ............................................................................. 368
18.3.2 Notes on Programming......................................................................................... 373
18.3.3 Reliability of Programmed Data .......................................................................... 374
19.1.1 Flash Memory Operating Principle ...................................................................... 375
19.1.2 Mode Programming and Flash Memory Address Space...................................... 376
19.1.3 Features ................................................................................................................ 376
19.1.4 Block Diagram...................................................................................................... 377
19.1.5 Input/Output Pins.................................................................................................. 378
19.1.6 Register Configuration ......................................................................................... 378
19.2.1 Flash Memory Control Register (FLMCR).......................................................... 379
19.2.2 Erase Block Register 1 (EBR1)............................................................................ 380
19.2.3 Erase Block Register 2 (EBR2)............................................................................ 381
19.2.4 Wait-State Control Register (WSCR) .................................................................. 382
19.3.1 Boot Mode............................................................................................................ 386
19.3.2 User Programming Mode ..................................................................................... 392
19.4.1 Program Mode...................................................................................................... 394
19.4.2 Program-Verify Mode .......................................................................................... 395
19.4.3 Programming Flowchart and Sample Program .................................................... 396
19.4.4 Erase Mode........................................................................................................... 398
19.4.5 Erase-Verify Mode ............................................................................................... 398
19.4.6 Erasing Flowchart and Sample Program .............................................................. 399
19.4.7 Prewrite Verify Mode........................................................................................... 412
19.4.8 Protect Modes....................................................................................................... 412
19.4.9 Interrupt Handling during Flash Memory Programming and Erasing ................. 413
19.6.1 Writer Mode Setting ............................................................................................. 418
19.6.2 Socket Adapter and Memory Map ....................................................................... 418
19.6.3 Operation in Writer Mode .................................................................................... 420
20.1.1 Flash Memory Operating Principle ...................................................................... 437
20.1.2 Mode Programming and Flash Memory Address Space...................................... 438
........ 375
........ 437
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