HD64F3437STF16V Renesas Electronics America, HD64F3437STF16V Datasheet - Page 528

MCU 3/5V 60K PB-FREE 100-TQFP

HD64F3437STF16V

Manufacturer Part Number
HD64F3437STF16V
Description
MCU 3/5V 60K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheet

Specifications of HD64F3437STF16V

Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3437STF16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
HD64F3437STF16V
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Table 20.18
Conditions: V
Item
High-voltage
(12 V) threshold
level
FV
Notes: *1 The listed voltages describe the threshold level at which high-voltage application is
496
PP
* 1
current
*2 In the LH version, V
recognized. In boot mode and while flash memory is being programmed or erased, the
applied voltage should be 12.0 V
V
T
DC Characteristics of Flash Memory
a
CC
SS
= –40 C to +85 C (wide-range specifications)
= AV
= 2.7 V to 5.5 V
FV
During read
During
programming
During
erasure
PP
SS
, MD
= 0 V, V
1
CC
= 3.0 V to 5.5 V, AV
*2
Symbol
V
I
PP
PP
, AV
H
= 12.0 0.6 V, T
CC
= 2.7 V to 5.5 V
Min
V
0.6 V.
CC
+ 2
CC
a
= –20 C to +75 C (regular specifications),
= 3.0 V to 5.5 V, AV
Typ
10
20
20
*2
, AV
Max
11.4
10
20
40
40
ref
= 2.7 V to AV
Unit
V
mA
mA
mA
A
ref
= 3.0 V to AV
Test Conditions
V
V
PP
PP
CC
= 2.7 to 5.5 V
= 12.6 V
*2
,
CC
.

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