HD64F3437STF16V Renesas Electronics America, HD64F3437STF16V Datasheet - Page 460

MCU 3/5V 60K PB-FREE 100-TQFP

HD64F3437STF16V

Manufacturer Part Number
HD64F3437STF16V
Description
MCU 3/5V 60K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheet

Specifications of HD64F3437STF16V

Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3437STF16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
HD64F3437STF16V
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
19.7
Read these precautions before using writer mode, on-board programming mode, or flash memory
emulation by RAM.
(1) Program with the specified voltages and timing.
The rated programming voltage (V
If the PROM programmer is set to Hitachi HN28F101 specifications, V
voltages in excess of the rating can permanently damage the device. Take particular care to ensure
that the PROM programmer peak overshoot does not exceed the rated limit of 13 V.
(2) Before programming, check that the chip is correctly mounted in the PROM
programmer. Overcurrent damage to the device can result if the index marks on the PROM
programmer socket, socket adapter, and chip are not correctly aligned.
(3) Don’t touch the socket adapter or chip while programming. Touching either of these can
cause contact faults and write errors.
428
V
V
Address
CE
OE
WE
I/O0 to I/O7
Note: Erase-verify data output values may be intermediate between 1 and 0 before erasing has been completed.
CC
PP
5.0 V
12 V
5.0 V
Flash Memory Programming and Erasing Precautions
t
t
CES
VPS
t
OEWS
t
t
WEP
DS
Command
input
t
CEH
t
Erase setup
DH
t
CWC
t
WEH
Figure 19.19 Erase Timing
PP
t
CES
) of the flash memory is 12.0 V.
t
WEP
Command
t
t
DS
CEH
input
t
DH
Erase
t
ET
t
CES
t
Valid address
AS
Command
t
t
WEP
DS
input
t
AH
t
DH
t
CEH
t
OERS
PP
Erase-verify
will be 12.0 V. Applying
t
VA
Valid data
output
t
VPH
t
DF

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