HD64F3437STF16V Renesas Electronics America, HD64F3437STF16V Datasheet - Page 407

• Manufacturer Part Number: HD64F3437STF16V
• Description: MCU 3/5V 60K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3437STF16V

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

19.1
19.1.1
Table 19.1 illustrates the principle of operation of the H8/3434F’s on-chip flash memory.
Like EPROM, flash memory is programmed by applying a high gate-to-drain voltage that draws
hot electrons generated in the vicinity of the drain into a floating gate. The threshold voltage of a
programmed memory cell is therefore higher than that of an erased cell. Cells are erased by
grounding the gate and applying a high voltage to the source, causing the electrons stored in the
floating gate to tunnel out. After erasure, the threshold voltage drops. A memory cell is read like
an EPROM cell, by driving the gate to the high level and detecting the drain current, which
depends on the threshold voltage. Erasing must be done carefully, because if a memory cell is
overerased, its threshold voltage may become negative, causing the cell to operate incorrectly.
Section 19.4.6 shows an optimal erase control flowchart and sample program.
Table 19.1 Principle of Memory Cell Operation
Memory
cell
Memory
array
(32-kbyte Dual-Power-Supply Flash Memory Version)
Flash Memory Overview
Flash Memory Operating Principle
Program
Vd
Vg = V
PP
0 V
Vd
Section 19 ROM
V
0 V
0 V
PP
Erase
Vs = V
PP
Open
Open
Open
0 V
V
0 V
PP
Read
Vd
Vg
0 V
Vd
V
0 V
0 V
375
CC