UPD70F3785GJ-GAE-AX Renesas Electronics America, UPD70F3785GJ-GAE-AX Datasheet - Page 1747

• Manufacturer Part Number: UPD70F3785GJ-GAE-AX
• Description: MCU 32BIT V850ES/JX3-E 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Er

Specifications of UPD70F3785GJ-GAE-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: CSI, EBI/EMI, Ethernet, I²C, UART/USART, USB
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 100
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 124K x 8
• Voltage - Supply (vcc/vdd): 2.85 V ~ 3.6 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(T
Note Time required to detect the detection voltage and set the RAMS.RAMF bit.
Detection voltage
Supply voltage rise time
Response time
Minimum pulse width
A
(14) RAM retention detection
= −40 to +85°C, V
Parameter
Detection voltage (MAX.)
Note
Operating voltage (MIN.)
Detection voltage (MIN.)
Detection voltage (TYP.)
RAMS.RAMF bit
DD
Supply voltage
= EV
DD
(V
= UV
DD
V
t
t
t
RAMHTH
RAMHD
RAMHW
)
Symbol
CHAPTER 35 ELECTRICAL SPECIFICATIONS
RAMH
DD
= AV
REF0
V
After V
User’s Manual U19601EJ2V0UD
DD
= 0 to 2.85 V
, V
t
RAMHD
t
DD
RAMHTH
SS
reaches 2.1 V
= AV
Conditions
SS
Cleared by instruction
= 0 V, C
L
= 50 pF)
0.002
MIN.
1.9
0.2
t
RAMHW
TYP.
2.0
0.2
t
RAMHD
MAX.
2.1
3.0
Time
Unit
ms
ms
ms
V
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