h8s-2635 Renesas Electronics Corporation., h8s-2635 Datasheet - Page 1114

• Manufacturer Part Number: h8s-2635
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2600 Series
• Manufacturer: Renesas Electronics Corporation.

Section 24 Electrical Characteristics
24.3.7
Table 24-34 shows the flash memory characteristics.
Table 24-34 Flash Memory Characteristics
Conditions: V
Rev. 6.00 Feb 22, 2005 page 1054 of 1484
REJ09B0103-0600
Item
Programming time *
Erase time *
Reprogramming count
Programming Wait time after SWE bit setting *
Erase
Flash Memory Characteristics
1
*
3
V
T
specification)
*
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy
write *
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
5
a
CC
ref
= 0 to +75°C (Programming/erasing operating temperature range: regular
1
= 4.5 V to AV
=4.5 V to 5.5 V, PWMV
*
1
2
*
4
CC
, V
1
1
SS
1
1
1
= PWMV
*
*
1
1
1
1
1
4
5
1
1
1
1
1
*
CC
4
Symbol
t
t
N
t
t
t
t
t
t
t
t
t
t
t
N
t
t
t
t
t
t
= 4.5 V to 5.5 V, AV
P
E
sswe
spsu
sp30
sp200
sp10
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
WEC
SS
= PLLV
Min.
—
—
—
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
SS
, AV
Typ.
10
100
—
1
50
30
200
10
5
5
4
2
2
100
—
1
100
10
10
10
20
CC
SS
= 0 V
Max.
200
1200
100
—
—
32
202
12
—
—
—
—
—
—
1000
—
—
100
—
—
—
= 4.5 V to 5.5 V,
Unit
ms/
128 bytes
ms/block
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
Test Condition
Programming
time wait
Programming
time wait
Additional-
programming
time wait
Erase time wait