DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 233
DF2367VF33
Manufacturer Part Number
DF2367VF33
Description
MCU 3V 384K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.DF2368VTE34V.pdf
(1044 pages)
Specifications of DF2367VF33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VF33
HD64F2367VF33
HD64F2367VF33
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Section 6 Bus Controller (BSC)
6.6.9
Wait Control
There are two ways of inserting wait states in a DRAM access cycle: program wait insertion and
pin wait insertion using the WAIT pin.
Wait states are inserted to extend the CAS assertion period in a read access to DRAM space, and
to extend the write data setup time relative to the falling edge of CAS in a write access.
Program Wait Insertion: When the bit in ASTCR corresponding to an area designated as DRAM
space is set to 1, from 0 to 7 wait states can be inserted automatically between the T
state and T
c1
c2
state, according to the WTCR setting.
Pin Wait Insertion: When the WAITE bit in BCR is set to 1 and the ASTCR bit is set to 1, wait
input by means of the WAIT pin is enabled. When DRAM space is accessed in this state, a
) is first inserted. If the WAIT pin is low at the falling edge of φ in the last T
program wait (T
or
w
c1
state is inserted. If the WAIT pin is held low, T
T
state, another T
states are inserted until it
w
w
w
goes high.
Figures 6.25 and 6.26 show examples of wait cycle insertion timing in the case of 2-state and 3-
state column address output cycles.
Rev.6.00 Mar. 18, 2009 Page 173 of 980
REJ09B0050-0600
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