DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 246

MCU 3V 384K 128-QFP

DF2367VF33

Manufacturer Part Number
DF2367VF33
Description
MCU 3V 384K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2367VF33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VF33
HD64F2367VF33

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
DF2367VF33V
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
DF2367VF33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
DF2367VF33WV
Manufacturer:
Renesas Electronics America
Quantity:
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Section 6 Bus Controller (BSC)
In some DRAMs provided with a self-refresh mode, the RAS signal precharge time immediately
after self-refreshing is longer than the normal precharge time. A setting can be made in bits
TPCS2 to TPCS0 in REFCR to make the precharge time immediately after self-refreshing from 1
to 7 states longer than the normal precharge time. In this case, too, normal precharging is
performed according to the setting of bits TPC1 and TPC0 in DRACCR, and therefore a setting
should be made to give the optimum post-self-refresh precharge time, including this time. Figure
6.39 shows an example of the timing when the precharge time immediately after self-refreshing is
extended by 2 states.
Rev.6.00 Mar. 18, 2009 Page 186 of 980
REJ09B0050-0600
φ
CSn (RASn)
UCAS, LCAS
HWR (WE)
Note: n = 2, 3
T
Rp
Figure 6.38 Self-Refresh Timing
T
Rr
High
Software
standby
T
Rc3

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