DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 984

• Manufacturer Part Number: DF2367VF33
• Description: MCU 3V 384K 128-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VF33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2367VF33; HD64F2367VF33

Section 25 Electrical Characteristics
25.2.5
Table 25.25 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Rewrite times
Programming
Rev.6.00 Mar. 18, 2009 Page 924 of 980
REJ09B0050-0600
Flash Memory Characteristics
1
*
V
regular specifications), T
range: wide-range specifications)
3
*
Wait time after
SWE bit setting *
Wait time after
PSU bit setting *
Wait time after
P bit setting *
Wait time after
P bit clearing *
Wait time after
PSU bit clearing *
Wait time after
PV bit setting *
Wait time after
H'FF dummy
write *
Wait time after
PV bit clearing *
Wait time after
SWE bit clearing *
Maximum number
of writes *
CC
SS
6
= AV
= 3.0 V to 3.6 V, AV
1
*
1
2
*
SS
4
1
= 0 V, T
*
4
1
*
1
1
4
1
1
1
1
1
a
= 0°C to 75°C (program/erase operating temperature range:
Symbol
t
t
N
x
y
z
α
β
γ
ε
η
θ
N
P
E
WEC
a
CC
= 0°C to 85°C (program/erase operating temperature
z1
z2
z3
= 3.0 V to 3.6 V, V
Min
—
—
—
1
50
—
—
—
5
5
4
2
2
100
—
Typ
10
50
—
—
—
—
—
—
—
—
—
—
—
—
—
ref
= 3.0 V to AV
Max
200
1000
100
—
—
30
200
10
—
—
—
—
—
—
1000 *
5
Unit
ms/
128 bytes
ms/
block
Times
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Times
CC
,
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional
program-
ming wait