DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 973

• Manufacturer Part Number: DF2367VF33
• Description: MCU 3V 384K 128-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VF33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2367VF33; HD64F2367VF33

Table 25.15 DC Characteristics (2)
Conditions: V
Item
Input
leakage
current
Three-state
leakage
current
(off state)
Input pull-up
MOS current
Input
capacitance
Current
dissipation *
Analog
power
supply
current
2
V
T
RES
STBY, NMI,
MD2 to MD0
Ports 4 and 9
Ports 1 to 3,
P50 to P53,
ports 8, A to G
Ports A to E
RES
NMI
All input pins
except RES
and NMI
Normal operation I
Sleep mode
Standby mode *
During A/D and
D/A conversion
Idle
a
CC
SS
= –40°C to +85°C (wide-range specifications)
= AV
= 3.0 V to 3.6 V, AV
SS
= 0 V *
3
1
, T
Symbol
|I
| I
–I
C
AI
CC
in
in
TSI
p
|
CC
*
a
4
= –20°C to +75°C (regular specifications),
|
CC
= 3.0 V to 3.6 V, V
Min
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
75
(3.3 V)
55
(3.3 V)
0.01
—
0.3
(3.0 V)
0.01
Rev.6.00 Mar. 18, 2009 Page 913 of 980
ref
Section 25 Electrical Characteristics
= 3.0 V to AV
Max
10.0
1.0
1.0
1.0
300
30
30
15
115
95
10
80
2.0
5.0
CC
Unit
μA
μA
mA
pF
pF
pF
mA
mA
,
μA
μA
μA
μA
μA
μA
REJ09B0050-0600
Test
Conditions
V
V
V
AV
V
V
V
3.6 V
V
V
f = 1 MHz
T
f = 33 MHz
f = 33 MHz
T
50°C < T
a
a
in
CC
in
in
CC
CC
in
in
= 25°C
≤ 50°C
= 0.5 to
= 0.5 to
CC
= 0.5 to
= 0 V
= 0 V
–0.5 V
–0.5 V
= 3.0 to
–0.5 V
a