HD6417709SF133B Renesas Electronics America, HD6417709SF133B Datasheet - Page 331

IC SUPERH MPU ROMLESS 208LQFP

HD6417709SF133B

Manufacturer Part Number
HD6417709SF133B
Description
IC SUPERH MPU ROMLESS 208LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7700r
Datasheet

Specifications of HD6417709SF133B

Core Processor
SH-3
Core Size
32-Bit
Speed
133MHz
Connectivity
EBI/EMI, FIFO, IrDA, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
96
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 2.05 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
208-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-

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Burst Write: The timing chart for a burst write is shown in figure 10.17. In the SH7709S, a burst
write occurs only in the event of cache write-back or 16-byte DMAC transfer. In a burst write
operation, following the Tr cycle in which ACTV command output is performed, a WRIT
command is issued in the Tc1, Tc2, and Tc3 cycles, and a WRITA command that performs auto-
precharge is issued in the Tc4 cycle. In the write cycle, the write data is output at the same time as
the write command. In case of the write with auto-precharge command, precharging of the
relevant bank is performed in the synchronous DRAM after completion of the write command,
and therefore no command can be issued for the same bank until precharging is completed.
Consequently, in addition to the precharge wait cycle, Tpc, used in a read access, cycle Trwl is
also added as a wait interval until precharging is started following the write command. Issuance of
a new command for the same bank is deferred during this interval. The number of Trwl cycles can
be specified by the TRWL bits in MCR.
Rev. 5.00, 09/03, page 285 of 760

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