R5F211B1SP#U0 Renesas Electronics America, R5F211B1SP#U0 Datasheet - Page 336

• Manufacturer Part Number: R5F211B1SP#U0
• Description: IC R8C MCU FLASH 4K 20SSOP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/R8C/Tiny/1Br

Specifications of R5F211B1SP#U0

• Core Processor: R8C
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SIO, SSU, UART/USART
• Peripherals: LED, POR, Voltage Detect, WDT
• Number Of I /o: 13
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-SSOP
• For Use With: R0K5211B4S001BE - KIT STARTER FOR R8C/18191A1BR0K5211B4S000BE - KIT DEV EVALUATION R8C/1BR0E521174CPE10 - EMULATOR COMPACT R8C/18/19/1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Rev.
1.00
REVISION HISTORY
Sep 09, 2005
Date
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Figure 16.46 Example of Register Setting in Master Transmit Mode
(Clock Synchronous Serial Mode);
Table 17.1 Performance of A/D Converter
• Analog Input Voltage: “0V to Vref” → “0V to AVCC” revised
• NOTE1: “When the analog input voltage ... FFh in 8-bit mode.” added
Figure 17.1 Block Diagram of A/D Converter;
Table 18.1 Flash Memory Version Performance;
18.2 Memory Map;
Figure 18.1 Flash Memory Block Diagram for R8C/1A Group revised
Figure 18.2 Flash Memory Block Diagram for R8C/1B Group revised
18.4.3.5 Block Erase
Table 19.3 A/D Converter Characteristics;
Table 19.4 Flash Memory (Program ROM) Electrical Characteristics;
T able 19.5 Flash Memory (Data flash Block A, Block B) Electrical
Characteristics; NOTES1 and 3 revised
Table 19.8 Reset Circuit Electrical Characteristics (When Using Voltage
Monitor 1 Reset); NOTE2 revised
Table 19.10 High-speed On-Chip Oscillator Circuit Electrical
Characteristics;
Table 19.15 Electrical Characteristics (2) [Vcc = 5V];
Table 19.22 Electrical Characteristics (4) [Vcc = 3V];
20.3.1 Precautions on Timer X;
20.3.2 Precautions on Timer Z;
20.5.1.2 Selecting SSI Signal Pin added
21.Precautions on On-Chip Debugger; (1) added
R8C/1A Group, R8C/1B Group Hardware Manual
‘ “ • Set the IICSEL bit in the PMR register to “1” ’ added
“Vref” → “Vcom” revised
Program and Erase Endurance: (Program area) → (Program ROM),
“The user ROM ... area ... Block A and B.” →
“The user ROM ... area (program ROM) ... Block A and B (data flash).”
revised
“The block erase command cannot ... program-suspend.” added
V
NOTES3 and 5 revised, NOTE8 deleted
“High-Speed On-Chip Oscillator ...” →
“High-Speed On-Chip Oscillator Frequency ...” revised
NOTE2 added
NOTE1 deleted
NOTE1 deleted
“When writing “1” (count starts) to ... writing “1” to the TXS bit.” →
‘ “0” (count stops) can be read ... after the TXS bit is set to “1”.’ revised
“When writing “1” (count starts) to ... writing “1” to the TZS bit.” →
‘ “0” (count stops) can be read ... after the TZS bit is set to “1”.’ revised
ref
and V
IA
: Standard value, NOTE4 revised
C - 3
Description
Summary
(Data area) → (Data flash) revised