D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 208

MCU 3V 0K 100-TQFP

D12312SVTE25

Manufacturer Part Number
D12312SVTE25
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12312SVTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTE25
HD6412312SVTE25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12312SVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller
Write after Read: If an external write occurs after an external read while the ICIS0 bit in BCRH
is set to 1, an idle cycle is inserted at the start of the write cycle.
Figure 6.17 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle from ROM with a long output floating time, and bus cycle B is a CPU write cycle. In (a), an
idle cycle is not inserted, and a collision occurs in cycle B between the read data from ROM and
the CPU write data. In (b), an idle cycle is inserted, and a data collision is prevented.
Rev.7.00 Feb. 14, 2007 page 174 of 1108
REJ09B0089-0700
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
φ
(a) Idle cycle not inserted
T
1
Bus cycle A
(ICIS0 = 0)
T
Figure 6.17 Example of Idle Cycle Operation (2)
2
T
floating time
Long output
3
Bus cycle B
T
1
T
2
Data
collision
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
φ
T
(b) Idle cycle inserted
1
Bus cycle A
(ICIS0 = 1 (initial value))
T
2
T
3
T
I
Bus cycle B
T
1
T
2

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