D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 775

MCU 3V 0K 100-TQFP

D12312SVTE25

Manufacturer Part Number
D12312SVTE25
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12312SVTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTE25
HD6412312SVTE25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12312SVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
17.26
To provide real-time emulation in RAM of data that is to be written to the flash memory, a part of
the RAM can be overlaid on an area of flash memory (user MAT) that has been specified by the
RAM emulation register (RAMER). After the RAMER setting is made, the RAM is accessible in
both the user MAT area and as the RAM area that has been overlaid on the user MAT area. Such
emulation is possible in both user mode and user-program mode.
Figure 17.76 shows an example of the emulation of realtime programming of the user MAT area.
Flash Memory Emulation in RAM
Figure 17.76 Emulation of Flash Memory in RAM
No
Execute application program
Start of emulation program
End of emulation program
Write the data for tuning to
with the emulated block
Program the user MAT
Cancel RAMER setting
the overlaid RAM area
Tuning OK?
Set RAMER
Yes
Rev.7.00 Feb. 14, 2007 page 741 of 1108
REJ09B0089-0700
Section 17 ROM

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