D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 893

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

20.3.4
Table 20.27 A/D Conversion Characteristics
Condition B: V
Item
Resolution
Conversion time
Analog input capacitance
Permissible signal source impedance
Nonlinearity error
Offset error
Full-scale error
Quantization error
Absolute accuracy
20.3.5
Table 20.28 D/A Conversion Characteristics
Condition B: V
Item
Resolution
Conversion time
Absolute accuracy
A/D Conversion Characteristics
D/A Conversion Characteristics
0 V, φ = 2 MHz to 25 MHz, T
T
0 V, φ = 2 MHz to 25 MHz, T
T
a
a
CC
CC
= –40°C to 85°C (wide-range specifications)
= –40°C to 85°C (wide-range specifications)
= 3.0 V to 3.6 V, AV
= 3.0 V to 3.6 V, AV
Min
8
—
—
—
CC
CC
Typ
8
—
±2.0
—
= 3.0 V to 3.6 V, V
= 3.0 V to 3.6 V, V
a
a
Min
10
10.6
—
—
—
—
—
—
—
= –20°C to 75°C (regular specifications),
= –20°C to 75°C (regular specifications),
Max
8
10
±3.0
±2.0
Rev.7.00 Feb. 14, 2007 page 859 of 1108
10
—
—
—
—
—
—
—
—
Typ
Section 20 Electrical Characteristics
ref
ref
= 3.0 V to AV
= 3.0 V to AV
Unit
Bits
μs
LSB
LSB
Max
10
—
20
5
±5.5
±5.5
±5.5
±0.5
±6.0
Test Conditions
20-pF capacitive load
2-MΩ resistive load
4-MΩ resistive load
CC
CC
REJ09B0089-0700
, V
, V
SS
SS
LSB
Unit
Bits
μs
pF
kΩ
LSB
LSB
LSB
LSB
= AV
= AV
SS
SS
=
=