D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 745

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

(b) Flash multipurpose data destination parameter (FMPDR: general register ER0 of CPU):
This parameter indicates the start address in the area which stores the data to be programmed in
the user MAT. When the storage destination of the program data is in flash memory, an error
occurs. The error occurrence is indicated by the WD bit (bit 2) in FPFR.
FMPDR
Bits 31 to 0—MOD31 to MOD0: Store the start address of the area which stores the program
data for the user MAT. The consecutive 128-byte data is programmed to the user MAT starting
from the specified start address.
Bit
Initial value :
R/W
Bit
Initial value :
R/W
Bit
Initial value :
R/W
Bit
Initial value :
R/W
:
:
:
:
:
:
:
:
MOD31
MOD23
MOD15
MOD7
R/W
R/W
R/W
R/W
31
—
23
—
15
—
—
7
MOD30
MOD22
MOD14
MOD6
R/W
R/W
R/W
R/W
30
—
22
—
14
—
—
6
MOD29
MOD21
MOD13
MOD5
R/W
R/W
R/W
R/W
29
21
13
—
—
—
—
5
MOD28
MOD20
MOD12
MOD4
R/W
R/W
R/W
R/W
28
20
12
—
—
—
—
4
Rev.7.00 Feb. 14, 2007 page 711 of 1108
MOD27
MOD19
MOD11
MOD3
R/W
R/W
R/W
R/W
27
19
11
—
—
—
—
3
MOD26
MOD18
MOD10
MOD2
R/W
R/W
R/W
R/W
26
—
18
—
10
—
—
2
MOD25
MOD17
MOD9
REJ09B0089-0700
MOD1
R/W
R/W
R/W
R/W
Section 17 ROM
25
17
—
—
—
—
9
1
MOD24
MOD16
MOD8
MOD0
R/W
R/W
R/W
R/W
24
16
—
—
—
—
8
0