D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 779

MCU 3V 0K 100-TQFP

D12312SVTE25

Manufacturer Part Number
D12312SVTE25
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12312SVTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTE25
HD6412312SVTE25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12312SVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
17.27.1 Usage Notes
1. Download time of on-chip program
2. Write to flash-memory related registers by DTC
3. Compatibility with programming/erasing program of conventional F-ZTAT H8S
The programming program that includes the initialization routine and the erasing program that
includes the initialization routine are each 2 kbytes or less. Accordingly, when the CPU clock
frequency is 25 MHz, the download for each program takes approximately 164 μs at
maximum.
While an instruction in on-chip RAM is being executed, the DTC can write to the SCO bit in
FCCS that is used for a download request or FMATS that is used for MAT switching. Make
sure that these registers are not accidentally written to, otherwise an on-chip program may be
downloaded and damage RAM or a MAT switchover may occur and the CPU get out of
control. Do not use DTC to program FLASH related registers.
microcomputer
A programming/erasing program for flash memory used in the conventional F-ZTAT H8S
microcomputer which does not support download of the on-chip program by a SCO transfer
request cannot run in this LSI.
Be sure to download the on-chip program to execute programming/erasing of flash memory in
this LSI.
< User MAT >
Figure 17.79 Switching between the User MAT and User Boot MAT
Procedure for switching to the user boot MAT
[1] Mask interrupts
[2] Write H'AA to the FMATS register.
[3] Execute 4 NOP instructions before
Procedure for switching to the user MAT
[1] Mask interrupts
[2] Write a value other than H'AA to the FMATS register.
[3] Execute 4 NOP instructions before or after accessing
accessing the user boot MAT.
the user MAT.
< On-chip RAM >
switching to the
user boot MAT
Procedure for
Procedure for
the user MAT
switching to
Rev.7.00 Feb. 14, 2007 page 745 of 1108
< User boot MAT >
REJ09B0089-0700
Section 17 ROM

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