D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 722

MCU 3V 0K 100-TQFP

D12312SVTE25

Manufacturer Part Number
D12312SVTE25
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12312SVTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTE25
HD6412312SVTE25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12312SVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 17 ROM
17.22.2 Overview
(1) Block Diagram
Rev.7.00 Feb. 14, 2007 page 688 of 1108
REJ09B0089-0700
Note: To read from or write to any of the registers above except RAMER, the FLSHE bit
Mode pin
in system control register 2 (SYSCR2) must be set to 1.
Legend:
FCCS:
FPCS:
FECS:
FKEY:
FMATS: Flash MAT select register
FTDAR: Flash transfer destination address register
RAMER: RAM emulation register
Flash code control and status register
Flash program code select register
Flash erase code select register
Flash key code register
FMATS
FTDAR
RAMER
Figure 17.60 Block Diagram of Flash Memory
FCCS
FPCS
FECS
FKEY
Operating
mode
Internal data bus (16 bits)
Control unit
Internal address bus
Flash memory
User MAT: 512 kbytes
User boot MAT: 8 kbytes
Memory MAT unit

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