D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 640

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

Section 17 ROM
17.9.2
An example in which flash memory block area EB1 is overlapped is shown below.
Example in Which Flash Memory Block Area EB1 Is Overlapped
1. Set bits RAMS, RAM2, RAM1, and RAM0 in RAMER to 1, 0, 0, 1, to overlap part of RAM
2. Real-time programming is performed using the overlapping RAM.
3. After the program data has been confirmed, the RAMS bit is cleared, releasing RAM overlap.
4. The data written in the overlapping RAM is written into the flash memory space (EB1).
Rev.7.00 Feb. 14, 2007 page 606 of 1108
REJ09B0089-0700
onto the area (EB1) for which real-time programming is required.
(H'5FFFF)
(H'1FFFF)
Notes: 1. H'5FFFF, EB8 to EB13 in the H8S/2315 F-ZTAT.
RAM Overlap
H'3FFFF
H'00000
H'01000
H'02000
H'03000
H'04000
H'05000
H'06000
H'07000
H'08000
2. H'1FFFF, EB8 and EB9 in the H8S/2317 F-ZTAT.
*1
*2
Figure 17.19 Example of RAM Overlap Operation
(EB8 and EB9)
(EB8 to EB13)
Flash memory
EB8 to EB11
EB0
EB1
EB2
EB3
EB4
EB5
EB6
EB7
* 1
* 2
This area can be accessed
from both the RAM area
and flash memory area
On-chip RAM
H'FFDC00
H'FFEBFF
H'FFFBFF