D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 886

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

Section 20 Electrical Characteristics
20.3.2
Table 20.21 DC Characteristics
Condition B: V
Item
Schmitt
trigger input
voltage
Input high
voltage
Input low
voltage
Output high
voltage
Output low
voltage
Input
leakage
current
Three-state
leakage
current
(off state)
Rev.7.00 Feb. 14, 2007 page 852 of 1108
REJ09B0089-0700
DC Characteristics
Ports 1, 2,
IRQ0 to IRQ7
RES, STBY, NMI,
MD2 to MD0
EXTAL
Ports 3, A to G
Port 4
RES, STBY,
MD2 to MD0
NMI, EXTAL,
ports 3, 4, A to G
All output pins
Port 4
Ports 1 to 3,
A to G
All output pins
RES
STBY, NMI,
MD2 to MD0
V
T
a
CC
SS
= –40°C to +85°C (wide-range specifications)
= AV
= 3.0 V to 3.6 V, AV
SS
= 0 V *
1
Symbol
VT
VT
VT
V
V
V
| I
V
| I
, T
IH
IL
OL
OH
TSI
in
–
+
+
a
|
– VT
|
= –20°C to +75°C (regular specifications),
CC
–
= 3.0 V to 3.6 V, V
Min
V
—
V
V
V
2.2
2.2
–0.3
–0.3
—
—
—
V
V
—
—
CC
CC
CC
CC
CC
CC
× 0.2
× 0.07 —
× 0.9
× 0.7
– 0.5
– 1.0
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ref
= 3.0 V to AV
Max
—
V
—
V
V
V
AV
V
V
—
—
0.4
1.0
1.0
10.0
1.0
CC
CC
CC
CC
CC
CC
CC
× 0.7
+ 0.3
+ 0.3
+ 0.3
× 0.1
× 0.2
+ 0.3 V
Unit
V
V
V
V
V
V
V
V
V
μA
μA
V
V
μA
μA
CC
,
Test
Conditions
I
V
AV
V
V
I
I
V
V
OL
OH
OH
in
in
CC
in
CC
CC
= 1.6 mA
= 0.5 V to
= 0.5 V to
= 0.5 V to
= –200 μA
= –1 mA
– 0.5 V
– 0.5 V
– 0.5 V