D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 596

MCU 3V 0K 100-TQFP

D12312SVTE25

Manufacturer Part Number
D12312SVTE25
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12312SVTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTE25
HD6412312SVTE25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12312SVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 16 RAM
16.1.2
The on-chip RAM is controlled by SYSCR. Table 16.1 shows the address and initial value of
SYSCR.
Table 16.1 RAM Register
Name
System control register
Note: * Lower 16 bits of the address.
16.2
16.2.1
The on-chip RAM is enabled or disabled by the RAME bit in SYSCR. For details of other bits in
SYSCR, see section 5.2.1, System Control Register (SYSCR).
Bit 0—RAM Enable (RAME): Enables or disables the on-chip RAM. The RAME bit is
initialized when the reset state is released. It is not initialized in software standby mode.
Bit 0
RAME
0
1
Rev.7.00 Feb. 14, 2007 page 562 of 1108
REJ09B0089-0700
Bit
Initial value :
R/W
Register Configuration
Register Descriptions
System Control Register (SYSCR)
Description
On-chip RAM is disabled
On-chip RAM is enabled
:
:
R/W
7
0
6
0
Abbreviation
SYSCR
INTM1
R/W
5
0
INTM0
R/W
4
0
R/W
R/W
NMIEG
R/W
3
0
Initial Value
H'01
LWROD
R/W
2
0
R/W
1
0
Address *
H'FF39
(Initial value)
RAME
R/W
0
1

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