D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 784

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

Section 17 ROM
Table 17.58 Commands in PROM Mode
Command
Memory-read
mode
Auto-program
mode
Auto-erase
mode
Status-read
mode
17.28.3 Memory-Read Mode
(1) On completion of an automatic program, automatic erase, or status read, the LSI enters a
(2) In memory-read mode, the writing of commands is possible in the same way as in the
(3) After entering memory-read mode, continuous reading is possible.
(4) After power has first been supplied, the LSI enters the memory-read mode. For the AC
Rev.7.00 Feb. 14, 2007 page 750 of 1108
REJ09B0089-0700
Notes: 1. In auto-program mode, 129 cycles are required in command writing because of the
command waiting state. So, to read the contents of memory after these operations, issue the
command to change the mode to the memory-read mode before reading from the memory.
command-write state.
characteristics in memory read mode, see section 17.29.2, AC Characteristics and Timing in
PROM Mode.
2. In memory read mode, the number of cycles varies with the number of address writing
simultaneous 128-byte write.
cycles (n).
Number
of Cycles
1+n
129
2
2
Memory
MAT to be
Accessed
User MAT
User boot
MAT
User MAT
User boot
MAT
User MAT
User boot
MAT
Common to
both MATs
Mode
Write
Write
Write
Write
Write
Write
Write
1st Cycle
Address
X
X
X
X
X
X
X
Data
H'00
H'05
H'40
H'45
H'20
H'25
H'71
Mode
Read
Write
Write
Write
Address
RA
WA
X
X
2nd Cycle
Data
Dout
Din
H'20
H'25
H'71