D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 787

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

17.28.8 Time Taken in Transition to PROM Mode
Until oscillation has stabilized and while PROM mode is being set up, the LSI is unable to accept
commands. After the PROM-mode setup time has elapsed, the LSI enters memory-read mode. See
section 17.29.2, AC Characteristics and Timing in PROM Mode.
17.28.9 Notes on Using PROM Mode
(1) When programming addresses which have previously been programmed, apply auto-erasing
(2) When using PROM mode to program a chip that has been programmed/erased in an on-board
(3) Do not take the chip out of the PROM programmer or reset the chip during programming or
(4) The flash memory is initially in the erased state when the device is shipped by Renesas
(5) This LSI does not support modes such as the product identification mode of general purpose
(6) For further information on the writer programmer and its software version, please refer to the
before auto-programming.
programming mode, auto-erasing before auto-programming is recommended.
erasure. Flash memory is susceptible to permanent damage since a high voltage is being
applied during the programming/erasing. When the reset signal is accidentally input to the
chip, the period in the reset state until the reset signal is released should be longer than the
normal 100 μs.
Technology. For other chips for which the history of erasure is unknown, auto-erasing as a
check and supplement for the initialization (erase) level is recommended.
EPROM. Therefore, the device name is not automatically set in the PROM programmer.
instruction manual for the socket adapter.
Rev.7.00 Feb. 14, 2007 page 753 of 1108
REJ09B0089-0700
Section 17 ROM