D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 720

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

Section 17 ROM
17.22
17.22.1 Features
This LSI has an on-chip 512-kbyte flash memory. The flash memory has the following features.
• Two flash-memory MATs according to LSI initiation mode
• On-board programming modes
• PROM mode
• Programming/erasing interface by the download of on-chip program
• Emulation function of flash memory by using the on-chip RAM
• Protection modes
Rev.7.00 Feb. 14, 2007 page 686 of 1108
REJ09B0089-0700
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting in the initiation determines which memory
MAT is initiated first. The MAT can be switched by using the bank-switching method after
initiation.
⎯ The user memory MAT is initiated at a power-on reset in user mode: 512 kbytes
⎯ The user boot memory MAT is initiated at a power-on reset in user boot mode: 8 kbytes
⎯ Boot mode
⎯ User program mode
⎯ User boot mode
This mode uses the PROM programmer. The user MAT and user boot MAT can be
programmed.
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
As flash memory is overlapped with part of the on-chip RAM, the flash memory programming
can be emulated in real time.
There are three protection modes: software protection by the register setting, hardware
protection by reset/hardware standby, and error protection. The protection state for flash
memory programming/erasing can be set.
This mode is a program mode that uses an on-chip SCI interface. The user MAT and user
boot MAT can be programmed. This mode can automatically adjust the bit rate between
host and this LSI.
The user MAT can be programmed by using the optional interface.
The user boot program of the optional interface can be made and the user MAT can be
programmed.
Overview of Flash Memory (H8S/2319C 0.18µm F-ZTAT)