D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 696

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

Section 17 ROM
17.17
There are three kinds of flash memory program/erase protection: hardware protection, software
protection, and error protection.
17.17.1 Hardware Protection
Hardware protection refers to a state in which programming/erasing of flash memory is forcibly
disabled or aborted. Settings in flash memory control registers 1 and 2 (FLMCR1, FLMCR2) and
erase block registers 1 and 2 (EBR1, EBR2) are reset (see table 17.32).
Table 17.32 Hardware Protection
Item
Reset/standby
protection
Rev.7.00 Feb. 14, 2007 page 662 of 1108
REJ09B0089-0700
Flash Memory Protection
Description
•
•
In a reset (including a WDT overflow reset)
and in standby mode, FLMCR1, FLMCR2,
EBR1, and EBR2 are initialized, and the
program/erase-protected state is entered.
In a reset via the RES pin, the reset state is
not entered unless the RES pin is held low
until oscillation stabilizes after powering on.
In the case of a reset during operation, hold
the RES pin low for the RES pulse width
specified in section 20.3.3, AC
Characteristics.
Program
Yes
Functions
Erase
Yes