D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 689

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

While the SWE1 bit is set to 1 to perform programming or erasing for the addresses H'000000 to
H'03FFFF, this address area cannot be read. While the SWE2 bit is set to 1 to perform
programming or erasing for the addresses H'040000 to H'07FFFF, this address area cannot be
read. The control program that performs programming and erasing should be run in on-chip RAM
or flash memory except for the above address areas. When the program is located in external
memory, an instruction for programming the flash memory and the following instruction should
be located in on-chip RAM.
Figure 17.44 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Note: The watchdog timer should be activated to prevent overprogramming or overerasing
due to program runaway, etc.
Figure 17.44 User Program Mode Execution Procedure
Branch to flash memory application
Write transfer program (and the
program/erase control program if
necessary) beforehand
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
MD2, MD1, MD0 = 110, 111
program in RAM area
program to RAM
Reset-start
program
Rev.7.00 Feb. 14, 2007 page 655 of 1108
REJ09B0089-0700
Section 17 ROM