D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 661

MCU 3V 0K 100-TQFP

D12312SVTE25

Manufacturer Part Number
D12312SVTE25
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12312SVTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTE25
HD6412312SVTE25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12312SVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Notes: 1. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until
φ
V
FWE
MD2 to MD0
RES
SWE bit
CC
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
2. See section 20.3.6, Flash Memory Characteristics.
3. Mode programming setup time t
power-off by pulling the pins up or down.
*1
Figure 17.31 Power-On/Off Timing (User Program Mode)
t
OSC1
t
MDS
SWE set
*3
*2
Wait time: x
MDS
(min) = 200 ns
Programming/
erasing
possible
Rev.7.00 Feb. 14, 2007 page 627 of 1108
SWE cleared
Wait time: 100 μs
Min 0 μs
REJ09B0089-0700
Section 17 ROM

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