D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 714

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

Section 17 ROM
17.20.7 Status Read Mode
• Status read mode is used to identify what type of abnormal end has occurred. Use this mode
• The return code is retained until a command write for other than status read mode is
Table 17.42 AC Characteristics in Status Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
OE output delay time
Disable delay time
CE output delay time
WE rise time
WE fall time
Rev.7.00 Feb. 14, 2007 page 680 of 1108
REJ09B0089-0700
when an abnormal end occurs in auto-program mode or auto-erase mode.
performed.
I/O
A
5
18
to I/O
to A
I/O
I/O
WE
OE
CE
CC
0
7
6
0
= 3.3 V ±0.3 V, V
Figure 17.57 Auto-Erase Mode Timing Waveforms
t
ces
t
f
t
ds
t
wep
Symbol
t
t
t
t
t
t
t
t
t
t
t
H'20
nxtc
ceh
ces
dh
ds
wep
oe
df
ce
r
f
SS
t
ceh
t
r
= 0 V, T
t
dh
t
nxtc
a
= 25°C ±5°C
H'20
Min
20
0
0
50
50
70
—
—
—
—
—
Erase end identifi-
cation signal
Erase normal end
confirmation signal
t
ests
t
erase
t
spa
Max
—
—
—
—
—
—
150
100
150
30
30
H'00
t
nxtc
Unit
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns