DF2148ATE20 Renesas Electronics America, DF2148ATE20 Datasheet - Page 22

IC H8S MCU FLASH 128K 100-QFP

DF2148ATE20

Manufacturer Part Number
DF2148ATE20
Description
IC H8S MCU FLASH 128K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148ATE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2148ATE20
HD64F2148ATE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2148ATE20IV
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
DF2148ATE20IV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Rev. 4.00 Sep 27, 2006 page xx of xliv
Item
26.6.6 Flash Memory
Characteristics
Table 26.67 Flash
Memory Characteristics
(Programming/erasing
operating range)
26.7.2 Clock Timing
Figure 26.6 Oscillation
Settling Timing
26.7.5 Timing of On-
Chip Supporting Modules
Figure 26.28 I
Interface Input/Output
Timing (Option)
2
C Bus
Page
908
909
912
924
Revision (See Manual for Details)
Table 26.67 amended
Symbol of wait time after SWE-bit clear (Before)
Notes 8 to 10 added
Notes: 8. Minimum number of times for which all
characteristics are guaranteed after rewriting (Guarantee range
is 1 to minimum value).
9. Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
10. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
Figure 26.6 amended
EXTAL
V
STBY
RES
Figure 26.28 amended
SDA0,
SDA1
SCL0,
SCL1
Item
Reprogramming count
Data retention time *
Programming Wait time after SWE-bit setting *
CC
P *
t
OSC1
10
t
DEXT
t
BUF
S *
t
t
Sf
of
V
V
IH
IL
t
STAH
t
SCLL
1
t
SCL
Symbol Min
N
t
x
DRP
t
WEC
SCLH
t
Sr
100 *
10
1
8
Typ
10000 *
t
SDAH
9
Max
Unit
Times
Years
µs
t
OSC1
t
DEXT
(After)
Test
Condition

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