UPD78F0550MA-FAA-AX Renesas Electronics America, UPD78F0550MA-FAA-AX Datasheet - Page 661

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UPD78F0550MA-FAA-AX

Manufacturer Part Number
UPD78F0550MA-FAA-AX
Description
MCU 8BIT 16-SSOP
Manufacturer
Renesas Electronics America
Series
78K0/Kx2-Lr
Datasheet

Specifications of UPD78F0550MA-FAA-AX

Package / Case
*
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Speed
10MHz
Number Of I /o
12
Core Processor
78K/0
Program Memory Type
FLASH
Ram Size
384 x 8
Program Memory Size
4KB (4K x 8)
Data Converters
A/D 4x10b
Oscillator Type
Internal
Peripherals
LVD, POR, PWM, WDT
Connectivity
I²C, LIN, UART/USART
Core Size
8-Bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD78F0550MA-FAA-AX
Manufacturer:
Renesas
Quantity:
800
Part Number:
UPD78F0550MA-FAA-AX
Manufacturer:
RENESAS/瑞萨
Quantity:
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25.7 Flash Memory Programming by Self-Programming
via a user program. Because this function allows a user application to rewrite the flash memory by using the
78K0/Kx2-L microcontroller self-programming library, it can be used to upgrade the program in the field.
servicing can be executed. If an unmasked interrupt request is generated in the EI state, the request branches
directly from the self-programming library to the interrupt routine. After the self-programming mode is later restored,
self-programming can be resumed. However, the interrupt response time is different from that of the normal operation
mode.
The 78K0/Kx2-L microcontrollers support a self-programming function that can be used to rewrite the flash memory
If an interrupt occurs during self-programming, self-programming can be temporarily stopped and interrupt
Cautions 1. The self-programming function cannot be used when the CPU operates with the subsystem
Remark The 78K0/Kx2-L microcontroller self-programming library and EEPROM emulation library are under
development.
2. To prohibit an interrupt during self-programming, in the same way as in the normal operation
3. Flash memory can be rewritten at a power supply voltage of 2.6 V or less only during
clock.
mode, execute the self-programming library in the state where the IE flag is cleared (0) by the
DI instruction. To enable an interrupt, clear (0) the interrupt mask flag to accept in the state
where the IE flag is set (1) by the EI instruction, and then execute the self-programming
library.
EEPROM emulation in low power consumption mode. A flash memory area that is written or
erased in low power consumption mode cannot be accessed in normal power mode.
Preliminary User’s Manual U19111EJ2V1UD
CHAPTER 25 FLASH MEMORY
661

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