DF70844AD80FPV Renesas Electronics America, DF70844AD80FPV Datasheet - Page 1305

• Manufacturer Part Number: DF70844AD80FPV
• Description: IC SUPERH MCU FLASH 112LQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7080r

Specifications of DF70844AD80FPV

• Core Size: 32-Bit
• Program Memory Size: 256KB (256K x 8)
• Core Processor: SH-2
• Speed: 80MHz
• Connectivity: EBI/EMI, FIFO, I²C, SCI, SSU
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• No. Of I/o's: 76
• Ram Memory Size: 16KB
• Cpu Speed: 80MHz
• Digital Ic Case Style: LQFP
• Supply Voltage Range: 3V To 3.6V, 4.5V To 5.5V
• Embedded Interface Type: I2C, SCI
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: R0K570865S001BE - KIT STARTER FOR SH7086R0K570865S000BE - KIT STARTER FOR SH7086HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

(4) Erasure Execution
(4.1) Flash erase block select parameter (FEBS: general register R4 of CPU)
Initial value:
Initial value:
Bit
31 to 8 
7 to 0
When flash memory is erased, the erase-block number on the user MAT must be passed to the
erasing program which is downloaded. This is set to the FEBS parameter (general register R4).
One block is specified from the block number 0 to 15.
For details on the erasing procedure, see section 23.5.2, User Program Mode.
This parameter specifies the erase-block number. Several block numbers cannot be specified.
R/W:
R/W:
Bit:
Bit:
Bit Name
EBS[7:0]
R/W
R/W
31
15
-
-
-
-
R/W
R/W
30
14
-
-
-
-
R/W
R/W
Initial
Value
Undefined R/W
Undefined R/W
29
13
-
-
-
-
R/W
R/W
28
12
-
-
-
-
R/W
R/W
27
11
-
-
-
-
R/W
R/W
R/W
26
10
-
-
-
-
Description
Unused
Return 0.
•
Set the erase-block number in the range from 0 to 15. 0
corresponds to the EB0 block and 15 corresponds to
the EB15 block. An error occurs when a number other
than 0 to 15 (H'00 to H'0F) is set.
•
Set the erase-block number in the range from 0 to 11. 0
corresponds to the EB0 block and 11 corresponds to
the EB11 block. An error occurs when a number other
than 0 to 11 (H'00 to H'0B) is set.
R/W
R/W
25
9
-
-
-
-
512-kbyte flash memory
256-kbyte flash memory
R/W
R/W
24
8
-
-
-
-
R/W
R/W
23
7
-
-
-
Rev. 3.00 May 17, 2007 Page 1247 of 1582
R/W
R/W
22
6
-
-
-
R/W
R/W
21
5
-
-
-
R/W
R/W
20
4
-
-
-
EBS[7:0]
Section 23 Flash Memory
R/W
R/W
19
3
-
-
-
REJ09B0181-0300
R/W
R/W
18
2
-
-
-
R/W
R/W
17
1
-
-
-
R/W
R/W
16
0
-
-
-