DF70844AD80FPV Renesas Electronics America, DF70844AD80FPV Datasheet - Page 1329

IC SUPERH MCU FLASH 112LQFP

DF70844AD80FPV

Manufacturer Part Number
DF70844AD80FPV
Description
IC SUPERH MCU FLASH 112LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7080r
Datasheet

Specifications of DF70844AD80FPV

Core Size
32-Bit
Program Memory Size
256KB (256K x 8)
Core Processor
SH-2
Speed
80MHz
Connectivity
EBI/EMI, FIFO, I²C, SCI, SSU
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
No. Of I/o's
76
Ram Memory Size
16KB
Cpu Speed
80MHz
Digital Ic Case Style
LQFP
Supply Voltage Range
3V To 3.6V, 4.5V To 5.5V
Embedded Interface Type
I2C, SCI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
R0K570865S001BE - KIT STARTER FOR SH7086R0K570865S000BE - KIT STARTER FOR SH7086HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF70844AD80FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
DF70844AD80FPV
Quantity:
5 000
23.6
There are three kinds of flash memory program/erase protection: hardware, software, and error
protection.
23.6.1
Programming and erasing of flash memory is forcibly disabled or suspended by hardware
protection. In this state, the downloading of an on-chip program and initialization of the flash
memory are possible. However, an activated program for programming or erasure cannot program
or erase locations in a user MAT, and the error in programming/erasing is reported in the FPFR
parameter.
Table 23.9 Hardware Protection
Item
FWE-pin protection The input of a low-level signal on the FWE
Reset/standby
protection
Protection
Hardware Protection
Description
pin clears the FWE bit of FCCS and the LSI
enters a programming/erasing-protected
state.
A power-on reset (including a power-on
reset by the WDT) and entry to standby
mode initializes the programming/erasing
interface registers and the LSI enters a
programming/erasing-protected state.
Resetting by means of the RES pin after
power is initially supplied will not make
the LSI enter the reset state unless the
RES pin is held low until oscillation has
stabilized. In the case of a reset during
operation, hold the RES pin low for the
RES pulse width that is specified in the
section on AC characteristics. If the LSI is
reset during programming or erasure,
data in the flash memory is not
guaranteed. In this case, execute erasure
and then execute programming again.
Rev. 3.00 May 17, 2007 Page 1271 of 1582
Download
Function to be Protected
Section 23 Flash Memory
REJ09B0181-0300
Programming/
Erasure

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