HD64F3048VTF8 Renesas Electronics America, HD64F3048VTF8 Datasheet - Page 610

• Manufacturer Part Number: HD64F3048VTF8
• Description: IC H8 MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048VTF8

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F3048VX8

Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
19.2
19.2.1
Table 19.2 illustrates the principle of operation of the on-chip flash memory of the H8/3048F
(dual-power supply).
Like EPROM, flash memory is programmed by applying a high gate-to-drain voltage that draws
hot electrons generated in the vicinity of the drain into a floating gate. The threshold voltage of a
programmed memory cell is therefore higher than that of an erased cell. Cells are erased by
grounding the gate and applying a high voltage to the source, causing the electrons stored in the
floating gate to tunnel out. After erasure, the threshold voltage drops. A memory cell is read like
an EPROM cell, by driving the gate to the high level and detecting the drain current, which
depends on the threshold voltage. Erasing must be done carefully, because if a memory cell is
overerased, its threshold voltage may become negative, causing the cell to operate incorrectly.
Section 19.5.6, Erasing Flowchart and Sample Program shows an optimal erase control flowchart
and sample program.
Table 19.2 Principle of Memory Cell Operation
Rev. 7.00 Sep 21, 2005 page 584 of 878
REJ09B0259-0700
Memory
cell
Memory
array
Flash Memory Overview
Flash Memory Operation
Program
Vd
Vg = V
PP
0 V
Vd
V
0 V
0 V
PP
Vs = V
Erase
PP
Open
Open
Open
PP
= 12 V))
0 V
V
0 V
PP
Read
Vd
Vg = V
0 V
CC
Vd
V
0 V
0 V
CC