HD64F3048VTF8 Renesas Electronics America, HD64F3048VTF8 Datasheet - Page 669

• Manufacturer Part Number: HD64F3048VTF8
• Description: IC H8 MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048VTF8

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F3048VX8

19.8
(1) Program with the specified voltages and timing.
The rated programming voltage (V
If the PROM programmer is set to Renesas Technology HN28F101 specifications, V
12.0 V. Applied voltages in excess of the rating can permanently damage the device. Insure, in
particular, that peak overshoot at the Vpp and MD2 pins does not exceed the maximum rating of
13 V. Also, be very careful about PROM programmer overshoot.
(2) Before programming, check that the chip is correctly mounted in the PROM
programmer. Overcurrent damage to the device can result if the index marks on the PROM
programmer socket, socket adapter, and chip are not correctly aligned.
(3) Don’t touch the socket adapter or chip while programming. Touching either of these can
cause contact faults and write errors.
(4) Precautions in turning the programming voltage (V
19.24):
Apply the programming voltage (V
stable condition. Shut off V
condition. If V
to 5.5 V), since microcontroller operation is unstable and flash memory protection is not
functioning, the flash memory may be programmed or erased by mistake. This can occur even
if V
its rated voltage range (V
oscillator has stopped (except in standby), or if a program runaway has occurred. After V
power-up, do not apply V
and the microcontroller is safely in the reset state, or the reset has been cleared.
These power-on and power-off timing requirements should also be satisfied in the event of a
power failure and recovery from a power failure. If these requirements are not satisfied, the
flash memory may not only be unintentionally programmed or erased; it may be permanently
damaged.
The V
in FLMCR is set or cleared while a voltage of 12.0 ± 0.6 V is being applied to the V
After the V
EBR2) and the EV, PV, E, and P bits in FLMCR. Accordingly, program or erase flash memory
CC
PP
Flash Memory Programming and Erasing Precautions (Dual-Power
Supply)
= 0 V. The same danger of incorrect programming or erasing exists when V
bit in the flash memory control register (FLMCR) is set or cleared when the V
PP
E bit is set, it becomes possible to write the erase block registers (EBR1 and
PP
is turned on or off while V
Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
CC
PP
PP
= 2.7 to 5.5 V) if the clock oscillator has not stabilized, if the clock
until the clock oscillator has had time to settle (t
before V
PP
) of the flash memory is 12.0 V.
PP
) after the rise of V
CC
, again while the microcontroller is in a stable
CC
is not within its rated voltage range (V
Rev. 7.00 Sep 21, 2005 page 643 of 878
PP
CC
) on and off (see figures 19.22 to
, when the microcontroller is in a
OSC1
REJ09B0259-0700
= 20 ms min)
PP
CC
will be
PP
PP
CC
is within
pin.
PP
= 12 V))
= 2.7
E bit
CC