D12363VTE33 Renesas Electronics America, D12363VTE33 Datasheet - Page 196

• Manufacturer Part Number: D12363VTE33
• Description: MCU 3V 0K 120-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12363VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412363VTE33; HD6412363VTE33

Section 6 Bus Controller (BSC)
Bit
10
9
8
7
Rev.6.00 Mar. 18, 2009 Page 136 of 980
REJ09B0050-0600
Bit Name
RMTS2
RMTS1
RMTS0
BE
Initial Value
0
0
0
0
R/W
R/W
R/W
R/W
R/W
Description
DRAM Space Select
These bits designate DRAM space for areas 2
to 5.
When continuous DRAM space is set, it is
possible to connect large-capacity DRAM
exceeding 2 Mbytes per area. In this case, the
RAS signal is output from the CS2 pin.
000: Normal space
001: Normal space in areas 3 to 5
010: Normal space in areas 4 and 5
011: Reserved (setting prohibited)
100: Reserved (setting prohibited)
101: Reserved (setting prohibited)
110: Reserved (setting prohibited)
111: Continuous DRAM space in areas 2 to 5
Burst Access Enable
Selects enabling or disabling of burst access to
areas designated as DRAM space. DRAM
space burst access is performed in fast page
mode. When using EDO page mode DRAM, the
OE signal must be connected.
0: Full access
1: Access in fast page mode
DRAM space in area 2
DRAM space in areas 2 and 3