D12363VTE33 Renesas Electronics America, D12363VTE33 Datasheet - Page 772
D12363VTE33
Manufacturer Part Number
D12363VTE33
Description
MCU 3V 0K 120-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.DF2368VTE34V.pdf
(1044 pages)
Specifications of D12363VTE33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412363VTE33
HD6412363VTE33
HD6412363VTE33
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D12363VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 19 Flash Memory (0.35-μm F-ZTAT Version)
19.11
Precautions concerning the use of on-board programming mode, and programmer mode are
summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Reset the flash memory before turning on/off the power.
3. Use the recommended algorithm when programming and erasing flash memory.
4. Do not set or clear the SWE bit during execution of a program in flash memory.
5. Do not use interrupts while flash memory is being programmed or erased.
6. Do not perform additional programming. Erase the memory before reprogramming.
7. Before programming, check that the chip is correctly mounted in the PROM programmer.
Rev.6.00 Mar. 18, 2009 Page 712 of 980
REJ09B0050-0600
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas microcomputer device type with 512-kbyte on-chip
flash memory (FZTAT512V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter.
When applying or disconnecting Vcc power, fix the RES pin low and place the flash memory
in the hardware protection state. The power-on and power-off timing requirements should also
be satisfied in the event of a power failure and subsequent recovery.
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
P or E bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
Wait for at least 100 µs after clearing the SWE bit before executing a program or reading data
in flash memory.
When the SWE bit is set, data in flash memory can be rewritten. When the SWE bit is set to 1,
data in flash memory can be read only in program-verify/erase-verify mode. Access flash
memory only for verify operations (verification during programming/erasing). Also, do not
clear the SWE bit during programming, erasing, or verifying.
All interrupt requests, including NMI, should be disabled during programming/erasing the
flash memory to give priority to program/erase operations.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. In programmer mode, too, perform only one programming operation
on a 128-byte programming unit block. Programming should be carried out with the entire
programming unit block erased.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
Usage Notes
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