D12363VTE33 Renesas Electronics America, D12363VTE33 Datasheet - Page 777

• Manufacturer Part Number: D12363VTE33
• Description: MCU 3V 0K 120-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12363VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412363VTE33; HD6412363VTE33

The flash memory has the following features. Figure 20.1 shows a block diagram of the flash
memory.
20.1
• Size
Product Classification
H8S/2368F
H8S/2364F
H8S/2362F
H8S/2361F
H8S/2360F
• Two flash-memory MATs according to LSI initiation mode
• Programming/erasing interface by the download of on-chip program
• Programming/erasing time
• Number of programming
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting in the initiation determines which memory
MAT is initiated first. The MAT can be switched by using the bank-switching method after
initiation.
⎯ The user memory MAT is initiated at a power-on reset in user mode: 512 kbytes
⎯ The user boot memory MAT is initiated at a power-on reset in user boot mode: 8 kbytes
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
The user branch is also supported.
The flash memory programming time is 1 ms (typ) in 128-byte simultaneous programming and
8 µs per byte. The erasing time is 750 ms (typ) per 64-kbyte block.
The number of flash memory programming can be up to 100 times.
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
(H8S/2368F), 384 kbytes (H8S/2364F), 256 kbytes (H8S/2362F, H8S/2361F, H8S/2360F)
Features
HD64F2368
HD64F2364
HD64F2362
HD64F2361
HD64F2360
ROM Size
512 kbytes
384 kbytes
256 kbytes
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 717 of 980
ROM Address
H'000000 to H'07FFFF
(Modes 3 to 5 and 7)
H'000000 to H'05FFFF
(Modes 3 to 5 and 7)
H'000000 to H'03FFFF
(Modes 3 to 5 and 7)
REJ09B0050-0600