D12332VFC25 Renesas Electronics America, D12332VFC25 Datasheet - Page 825

MCU 3V 0K 144-QFP

D12332VFC25

Manufacturer Part Number
D12332VFC25
Description
MCU 3V 0K 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12332VFC25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
106
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412332VFC25
HD6412332VFC25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12332VFC25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
• User program mode
1.
3.
Initial state
(1) The FWE assessment program that confirms
that the FWE pin has been driven high, and (2)
the program that will transfer the programming/
erase control program to on-chip RAM should be
written into the flash memory by the user
beforehand. (3) The programming/erase control
program should be prepared in the host or in the
flash memory.
Flash memory initialization
The programming/erase program in RAM is
executed, and the flash memory is initialized (to
H’FF). Erasing can be performed in block units,
but not in byte units.
Chip
Chip
Application program
Transfer program
Transfer program
FWE assessment
FWE assessment
Flash memory
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
program
erase
erase control program
New application
New application
Programming/
program
program
Figure 19.32 User Program Mode (Example)
Host
Host
erase control program
Programming/
RAM
RAM
SCI
SCI
2.
4.
Programming/erase control program transfer
When the FWE pin is driven high, user software
confirms this fact, executes the transfer program
in the flash memory, and transfers the
programming/erase control program to RAM.
Writing new application program
Next, the new application program in the host is
written into the erased flash memory blocks. Do
not write to unerased blocks.
Chip
Chip
Rev.4.00 Sep. 07, 2007 Page 793 of 1210
Application program
Transfer program
New application
FWE assessment
FWE assessment
Transfer program
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
program
program
New application
program
Host
Host
erase control program
erase control program
Programming/
Programming/
Program execution state
RAM
RAM
REJ09B0245-0400
SCI
SCI

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