HD64F2623FA20J Renesas Electronics America, HD64F2623FA20J Datasheet - Page 1029

• Manufacturer Part Number: HD64F2623FA20J
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2623FA20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

EBR2—Erase Block Register 2
Bit
Initial value
Read/Write
:
:
:
Notes: 1. This register is not present in the mask ROM version, and an
Flash memory erase blocks
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
EB8 (32 kbytes)
EB9 (64 kbytes)
EB10 (64 kbytes)
EB11 (64 kbytes)
R/W
—
7
0
2. To access this register, set the FLSHE bit to 1 in serial control
attempt to read it will return an undefined value.
register X (SCRX). Even if FLSHE = 1, if the chip is in a mode
in which the on-chip flash memory is disabled, a read will return
H'00 and writes are invalid. Writes to this register are also
invalid when the FWE bit in FLMCR1 is not set to 1.
Block (Size)
R/W
—
6
0
R/W
—
5
0
R/W
—
4
0
Sets flash memory erase area block by block
H'000000–H'000FFF
H'001000–H'001FFF
H'002000–H'002FFF
H'003000–H'003FFF
H'004000–H'004FFF
H'005000–H'005FFF
H'006000–H'006FFF
H'007000–H'007FFF
H'008000–H'00FFFF
H'010000–H'01FFFF
H'020000–H'02FFFF
H'030000–H'03FFFF
H'FFAB
Rev. 5.00 Jan 10, 2006 page 1003 of 1042
EB11
R/W
3
0
Appendix B Internal I/O Register
Addresses
EB10
R/W
2
0
EB9
R/W
REJ09B0275-0500
1
0
R/W
EB8
0
0
ROM