HD64F2623FA20J Renesas Electronics America, HD64F2623FA20J Datasheet - Page 707

• Manufacturer Part Number: HD64F2623FA20J
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2623FA20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

4. Do not apply a constant high level to the FWE pin.
5. Use the recommended algorithm when programming and erasing flash memory.
6. Do not set or clear the SWE1 bit during execution of a program in flash memory.
7. Do not use interrupts while flash memory is being programmed or erased.
8. Do not perform additional programming. Erase the memory before reprogramming.
9. Before programming, check that the chip is correctly mounted in the PROM
10. Do not touch the socket adapter or chip during programming.
Apply a high level to the FWE pin only when programming or erasing flash memory. A
system configuration in which a high level is constantly applied to the FWE pin should be
avoided. Also, while a high level is applied to the FWE pin, the watchdog timer should be
activated to prevent overprogramming or overerasing due to program runaway, etc.
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
P1 or E1 bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
Do not set or clear the SWE1 bit during execution of a program in flash memory. Wait for at
least 100 µs after clearing the SWE1 bit before executing a program or reading data in flash
memory. When the SWE1 bit is set, data in flash memory can be rewritten, but when SWE1 =
1, flash memory can only be read in program-verify or erase-verify mode. Access flash
memory only for verify operations (verification during programming/erasing). Do not clear the
SWE1 bit during programming, erasing, or verifying.
Similarly, when using the RAM emulation function while a high level is being input to the
FWE pin, the SWE1 bit must be cleared before executing a program or reading data in flash
memory. However, the RAM area overlapping flash memory space can be read and written to
regardless of whether the SWE1 bit is set or cleared.
All interrupt requests, including NMI, should be disabled during FWE application to give
priority to program/erase operations.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. In programmer mode, also, perform only one programming operation
on a 128-byte programming unit block.
programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
Touching either of these can cause contact faults and write errors.
Rev. 5.00 Jan 10, 2006 page 681 of 1042
Section 19 ROM (Preliminary)
REJ09B0275-0500