HD64F2623FA20J Renesas Electronics America, HD64F2623FA20J Datasheet - Page 706

• Manufacturer Part Number: HD64F2623FA20J
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2623FA20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 19 ROM (Preliminary)
19.13
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Powering on and off (see figures 19.26 to 19.28)
3. FWE application/disconnection (see figures 19.26 to 19.28)
Rev. 5.00 Jan 10, 2006 page 680 of 1042
REJ09B0275-0500
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas microcomputer device type with 256-kbyte on-chip
flash memory (FZTAT256V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Do not apply a high level to the FWE pin until V
before turning off V
When applying or disconnecting V
in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a
power failure and subsequent recovery.
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to
prevent unintentional programming or erasing of flash memory:
•
•
•
•
•
Apply FWE when the V
Apply FWE when oscillation has stabilized (after the elapse of the oscillation settling
time).
In boot mode, apply and disconnect FWE during a reset.
In user program mode, FWE can be switched between high and low level regardless of
RES input.
FWE input can also be switched during execution of a program in flash memory.
Do not apply FWE if program runaway has occurred.
Disconnect FWE only when the SWE1, ESU1, PSU1, EV1, PV1, P1, and E1 bits in
FLMCR1 are cleared.
Make sure that the SWE1, ESU1, PSU1, EV1, PV1, P1, and E1 bits are not set by mistake
when applying or disconnecting FWE.
Flash Memory Programming and Erasing Precautions
CC
.
CC
voltage has stabilized within its rated voltage range.
CC
power, fix the FWE pin low and place the flash memory
CC
has stabilized. Also, drive the FWE pin low