UPD78F1506GF-GAT-AX Renesas Electronics America, UPD78F1506GF-GAT-AX Datasheet - Page 927

• Manufacturer Part Number: UPD78F1506GF-GAT-AX
• Description: MCU 16BIT 78K0R/LX3 128-LQFP
• Manufacturer: Renesas Electronics America
• Series: 78K0R/Lx3r

Specifications of UPD78F1506GF-GAT-AX

• Core Processor: 78K/0R
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: 3-Wire SIO, I²C, LIN, UART/USART
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number Of I /o: 78
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

<R>
<R>
78K0R/Lx3
(2) Operational amplifier
(3) Voltage Reference
R01UH0004EJ0401 Rev.4.01
Jul 2, 2010
Common-mode input voltage
Input offset voltage
Maximum output voltage
(high level)
Maximum output voltage
(low level)
Open-loop gain
GBW
Input noise spectral density
Slew rate
Turn on time
Output reference voltage
Temperature coefficient
Settling time
Caution Connect the V
Remark The settling time of the VR circuit is the time required until the reference voltage output voltage reaches the
(T
(T
A
A
= −40 to +85°C, 2.3 V ≤ AV
= −40 to +85°C, 2.3 V ≤ AV
Parameter
Parameter
ESL: 10 nH (max.)) and a ceramic capacitor (capacitance: 0.1
(max.)).
values above.
REFOUT
V
V
V
V
GBW
V
SR
t
V
Symbol
Symbol
ONAMP
IAMP
IOAMP
OHAMP
OLAMP
NAMP
REFOUT
DD0
DD0
pin to GND via a tantalum capacitor (capacitance: 10
AMP
≤ V
≤ V
DD
DD
AV
AV
AV
AV
AV
AV
AV
VRGV = 0, 2.7 V ≤ AV
T
VRGV = 1, 2.3 V ≤ AV
T
A
A
≤ 5.5 V, V
DD0
DD0
DD0
DD0
DD0
DD0
DD0
≤ 5.5 V, V
= 25°C
= 25°C
= 3.0 V
= 3.0 V/2.3 V, I
= 3.0 V/2.3 V, I
= 3.0 V
= 3.0 V
= 3.0 V, V
= 3.0 V
SS
SS
Conditions
Conditions
IN
= EV
= EV
= AV
SOURCE
SOURCE
DD0
DD0
SS
SS
DD0
=AV
=AV
≤ 5.5 V,
≤ 5.5 V,
/2
CHAPTER 31 ELECTRICAL SPECIFICATIONS
= −500
= 500
SS
SS
= 0 V)
= 0 V)
μ
μ
A
A
μ
F±30 %, ESR: 2 Ω (max.), ESL: 10 nH
AV
MIN.
MIN.
−0.2
2.45
1.96
0
DD0
TYP.
TYP.
100
2.5
60
40
μ
3
2
2
F±30 %, ESR: 2 Ω (max.),
AV
MAX.
MAX.
2.55
2.04
−0.6
±10
0.1
20
17
DD0
ppm/°C
MHz
nV
V/
Unit
Unit
mV
ms
dB
μ
V
V
V
H
V
V
μ
s
z
/
s
927