HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 572

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HD6412340

Manufacturer Part Number
HD6412340
Description
H8S/2345 F-ZTAT Hardware Manual
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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17.7
17.7.1
Note: * Determined by the state of the FWE pin.
FLMCR1 is an 8-bit register used for flash memory operating mode control. Program-verify mode
or erase-verify mode is entered by setting SWE to 1 when FWE = 1. Program mode is entered by
setting SWE to 1 when FWE = 1, then setting the PSU bit in FLMCR2, and finally setting the P
bit. Erase mode is entered by setting SWE to 1 when FWE = 1, then setting the ESU bit in
FLMCR2, and finally setting the E bit. FLMCR1 is initialized by a reset, and in hardware standby
mode and software standby mode. Its initial value is H'80 when a high level is input to the FWE
pin, and H'00 when a low level is input. When on-chip flash memory is disabled (modes 4 and 5),
a read will return H'00, and writes are invalid.
Writes to the SWE bit in FLMCR1 are enabled only when FWE = 1; writes to the EV and PV bits
only when FWE=1 and SWE=1; writes to the E bit only when FWE = 1, SWE = 1, and ESU = 1;
and writes to the P bit only when FWE = 1, SWE = 1, and PSU = 1.
Bit 7—Flash Write Enable Bit (FWE): Sets hardware protection against flash memory
programming/erasing. See section 17.14, Flash Memory Programming and Erasing Precautions,
before using this bit.
Bit 7
FWE
0
1
560
Bit
Initial value
Read/Write
Register Descriptions
Flash Memory Control Register 1 (FLMCR1)
Description
When a low level is input to the FWE pin (hardware-protected state)
When a high level is input to the FWE pin
FWE
—*
7
R
SWE
R/W
6
0
5
0
4
0
R/W
EV
3
0
R/W
PV
2
0
R/W
1
E
0
R/W
0
P
0

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