HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 658

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HD6412340

Manufacturer Part Number
HD6412340
Description
H8S/2345 F-ZTAT Hardware Manual
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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Table 20.10 Flash Memory Characteristics (2)
Conditions: V
Item
Programming time *
Erase time *
Number of programmings
Programming Wait time after setting SWE bit *
Erase
Notes: 1. Time settings should be made in accordance with the programming/erase algorithm.
5. Number of times when the wait time after P bit setting (z) = 200 s.
6. For the maximum erase time (t
2. Programming time per 32 bytes. (Indicates the total time the P bit in the flash memory
3. Time to erase one block. (Indicates the total time the E bit in FLMCR1 is set. The erase
1,
The maximum number of writes (N) should be set according to the actual set value of z
so as not to exceed the maximum programming time (t
wait time after E bit setting (z) and the maximum number of erases (N):
t
The values of z and N should be set so as to satisfy the above formula.
control register (FLMCR1) is set. The program verification time is not included.)
*
E
3,
(max) = Wait time after E bit setting (z)
T
Wait time after setting PSU bit *
Wait time after setting P bit *
Wait time after clearing P bit *
Wait time after clearing PSU bit *
Wait time after setting PV bit *
Wait time after H'FF dummy write *
Wait time after clearing PV bit *
Max. number of programmings *
Wait time after setting SWE bit *
Wait time after setting ESU bit *
Wait time after setting E bit *
Wait time after clearing E bit *
Wait time after clearing ESU bit *
Wait time after setting EV bit *
Wait time after H'FF dummy write *
Wait time after clearing EV bit *
Max. number of erases *
*
a
5
CC
= 0 to +75 C (flash memory programming/erase operating temperature range)
1,
= AV
*
2,
*
4
Examples: When z = 5 [ms], N = 240 times
CC
= 3.0 to 3.6 V, V
1,
When z = 10 [ms], N = 120 times
*
5
1,
1,
1
1
1
1
*
*
1
1
5
1
4
1
1
1
1,
E
1
1
SS
*
(max)), the following relationship applies between the
1
1
4
= AV
Symbol
t
t
N
x
y
z
N
x
y
z
N
P
E
WEC
SS
= 0 V,
maximum number of erases (N)
Min
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ
TBD
TBD
P
(max)).
—In planning stage—
Max
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Unit
ms/
32 bytes
ms/block
Times
Times
Times
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
Test
Conditions
649

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