HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 617

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HD6412340

Manufacturer Part Number
HD6412340
Description
H8S/2345 F-ZTAT Hardware Manual
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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Do not perform additional programming. Erase the memory before reprogramming. In on-
board programming, perform only one programming operation on a 32-byte programming unit
block. In writer mode, too, perform only one programming operation on a 128-byte programming
unit block. Programming should be carried out with the entire programming unit block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming. Touching either of these can
cause contact faults and write errors.
V
FWE
MD
RES
SWE bit
Notes: 1. Always fix the level by pulling down or pulling up the mode pins (MD
CC
2
to MD
Flash memory access disabled period
(x: Wait time after SWE setting)
Flash memory reprogrammable period
(Flash memory program execution and data read, other than verify, are disabled.)
2. See section 20.1.6 Flash Memory Characteristics.
3. Mode programming setup time t
0
*1
powering off, except for mode switching.
Figure 17.36 Powering On/Off Timing (Boot Mode)
t
OSC1
t
MDS
*2
t
MDS
Wait time: x
*3
SWE
set
*3
MDS
.
Programming
and erase
possible
Min 0 s
SWE
clear
2
to MD
Min 0 s
0
) until
605

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