R5F61663RN50FPV Renesas Electronics America, R5F61663RN50FPV Datasheet - Page 1409

MCU FLASH 384K ROM 144-LQFP

R5F61663RN50FPV

Manufacturer Part Number
R5F61663RN50FPV
Description
MCU FLASH 384K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheets

Specifications of R5F61663RN50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61663RN50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Table 30.8 Bus Timing (4)
Conditions: V
Note:
Item
Precharge time 1 for self-refresh
Precharge time 2 for self refresh
Address delay time 2
CS delay time 4
DQM delay time
CKE delay time
Item
Read data setup time 3
Read data hold time 3
Read data setup time 4
Read data hold time 4
Write data delay time 2
Write data hold time 4
*
V
CC
AV
T
T
=PLLV
a
a
CC
= –20°C to +75°C (regular specifications),
= –40°C to +85°C (wide-range specifications)
CC
= PLLV
, V
CC
SS
=DrV
= PLLV
CC
= DrV
CC
2.95 V to 3.6 V in the H8SX/1668M Group.
SS
Symbol
t
t
t
t
t
t
Symbol
t
t
t
t
t
t
= DrV
RPS1
RPS2
AD2
CSD4
DQMD
CKED
RDS3
RDH3
RDS4
RDH4
WDD2
WDH4
CC
= 3.0 V to 3.6 V*, AV
SS
= AV
Min.
2.5 × t
3.0 × t
1
1
1
1
Min.
12
0
12
0
1
SS
= 0 V, Bφ = 8 MHz to 50 MHz,
cyc
cyc
– 20 
– 20 
Rev. 2.00 Sep. 24, 2008 Page 1375 of 1468
CC
Max.
15
15
15
15
Max.
15
= 3.0 V to 3.6 V, V
Section 30 Electrical Characteristics
Unit
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ref
REJ09B0412-0200
Test
Conditions
Figure 30.28
Figure 30.27
Figures 30.29
to 30.34
Test
Conditions
Figures 30.29
to 30.34
= 3.0 V to

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